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NXP Semiconductors
IP4352CX24
9-channel SD memory card interface filter with ESD protection
5. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V I
Parameter
input voltage
Conditions
Min
? 0.5
Max
+5.0
Unit
V
V ESD
electrostatic discharge voltage
IEC 61000-4-2 level 4; output pins A4, A5, B4,
B5, C4, C5, D4, D5, E4, E5; pins A3, D3 and E3
connected to ground
contact discharge
air discharge
[1]
? 8
? 15
+8
+15
kV
kV
IEC 61000-4-2 level 1; all other pins; pins A3, D3
and E3 connected to ground
contact discharge
air discharge
? 2
? 2
+2
+2
kV
kV
P ch
P tot
channel power dissipation
total power dissipation
continuous power; T amb = 70 ° C
continuous power; T amb = 70 ° C
-
-
25
100
mW
mW
T stg
storage temperature
? 55
+150 ° C
T reflow(peak)
T amb
peak reflow temperature
ambient temperature
10 s maximum
-
? 30
260
+85
° C
° C
[1]
Device is qualified with 1000 pulses of ± 15 kV contact discharges each, according to the IEC 61000-4-2 model and far exceeds the
specified level 4 (8 kV contact discharge).
6. Characteristics
Table 4. Channel characteristics
T amb = 25 ° C; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
R s(ch)
channel series
resistance
R1 to R9 ± 20 %
R11 to R14 ± 30 %
R15 ± 30 %
R21 ± 30 %
32
35
10.5
329
40
50
15
470
48
65
19.5
611
Ω
k Ω
k Ω
k Ω
C ch
channel capacitance
V bias(DC) = 0 V; f = 1 MHz; pin DAT3_PU = 0 V;
pin DAT3_PD = 0 V; pin VSD = 0 V
SD card to I/O interface
pins DAT3_PD, DAT3_PU and VSD
[1]
[1]
-
-
-
30
20
-
pF
pF
V BR
I LR
breakdown voltage
reverse leakage current
I I = 1 mA
per channel; V I = 3 V
6
-
-
-
-
100
V
nA
[1]
Guaranteed by design.
IP4352CX24_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 3 May 2010
? NXP B.V. 2010. All rights reserved.
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